Catalog
NPN power Darlington transistor
Description
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The devices are manufactured in planar base island technology with monolithic Darlington configuration.
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NPN power Darlington transistor
NPN power Darlington transistor
| Part | Package / Case | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Mounting Type | Current - Collector (Ic) (Max) [Max] | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) [Max] | Operating Temperature | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | TO-220-3 | 750 | Through Hole | 8 A | 60 W | 100 V | 2 V | 500 çA | 150 °C | TO-220 |
STMicroelectronics | TO-220-3 | 750 | Through Hole | 8 A | 60 W | 80 V | 2 V | 500 çA | 150 °C | TO-220 |
 STMicroelectronics | TO-220-3 Full Pack | 750 | Through Hole | 8 A | 29 W | 80 V | 2 V | 500 çA | 150 °C | TO-220FP |