Specification	CSD18511KTT

Current - Continuous Drain (Id) @ 25°C	194 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	64 nC
Input Capacitance (Ciss) (Max) @ Vds	5940 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	188 W
Rds On (Max) @ Id, Vgs	2.6 mOhm
Supplier Device Package	TO-263 (DDPAK-3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

CSD18511Q5A Series

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm

Part	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs
Texas Instruments CSD18511KTT	40 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	188 W	194 A	2.4 V	MOSFET (Metal Oxide)	Surface Mount	20 V	4.5 V 10 V	N-Channel	64 nC	-55 °C	175 ░C	5940 pF	TO-263 (DDPAK-3)	2.6 mOhm
Texas Instruments CSD18511Q5AT	40 V	8-PowerTDFN	104 W	159 A	2.45 V	MOSFET (Metal Oxide)	Surface Mount	20 V	4.5 V 10 V	N-Channel	63 nC	-55 °C	150 °C	5850 pF	8-VSONP (5x6)	3.5 mOhm
Texas Instruments CSD18511Q5A	40 V	8-PowerTDFN	104 W	159 A	2.45 V	MOSFET (Metal Oxide)	Surface Mount	20 V	4.5 V 10 V	N-Channel	63 nC	-55 °C	150 °C	5850 pF	8-VSONP (5x6)	3.5 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This 40 V, 1.9 mΩ, SON 5 × 6 mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Technical documentation and resources