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8-Power TDFN
Discrete Semiconductor Products

CSD18511Q5AT

Active
Texas Instruments

40-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 2.3 MOHM

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8-Power TDFN
Discrete Semiconductor Products

CSD18511Q5AT

Active
Texas Instruments

40-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 2.3 MOHM

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD18511Q5AT
Current - Continuous Drain (Id) @ 25°C159 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]63 nC
Input Capacitance (Ciss) (Max) @ Vds5850 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)104 W
Rds On (Max) @ Id, Vgs3.5 mOhm
Supplier Device Package8-VSONP (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.63
10$ 1.34
100$ 1.04
Digi-Reel® 1$ 1.63
10$ 1.34
100$ 1.04
Tape & Reel (TR) 250$ 0.72
500$ 0.62
1250$ 0.61
Texas InstrumentsSMALL T&R 1$ 1.21
100$ 0.93
250$ 0.69
1000$ 0.49

Description

General part information

CSD18511Q5A Series

This 40 V, 1.9 mΩ, SON 5 × 6 mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

This 40 V, 1.9 mΩ, SON 5 × 6 mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.