CSD18511Q5A Series

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm

Catalog

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm

Part	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs
Texas Instruments CSD18511KTT	40 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	188 W	194 A	2.4 V	MOSFET (Metal Oxide)	Surface Mount	20 V	4.5 V 10 V	N-Channel	64 nC	-55 °C	175 ░C	5940 pF	TO-263 (DDPAK-3)	2.6 mOhm
Texas Instruments CSD18511Q5AT	40 V	8-PowerTDFN	104 W	159 A	2.45 V	MOSFET (Metal Oxide)	Surface Mount	20 V	4.5 V 10 V	N-Channel	63 nC	-55 °C	150 °C	5850 pF	8-VSONP (5x6)	3.5 mOhm
Texas Instruments CSD18511Q5A	40 V	8-PowerTDFN	104 W	159 A	2.45 V	MOSFET (Metal Oxide)	Surface Mount	20 V	4.5 V 10 V	N-Channel	63 nC	-55 °C	150 °C	5850 pF	8-VSONP (5x6)	3.5 mOhm

Catalog

40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm

Key Features

• Low RDS(ON)Low Thermal ResistanceAvalanche RatedLogic LevelPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageLow RDS(ON)Low Thermal ResistanceAvalanche RatedLogic LevelPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic Package

Description

This 40 V, 1.9 mΩ, SON 5 × 6 mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. This 40 V, 1.9 mΩ, SON 5 × 6 mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.