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TO-220AB PKG
Discrete Semiconductor Products

IRF100B202

Active
INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 8.6 MOHM;

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Search across all available documentation for this part.

DocumentsMOSFET OptiMOS™ and StrongIRFET™FIT Report - IRF100B202+5
TO-220AB PKG
Discrete Semiconductor Products

IRF100B202

Active
INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 8.6 MOHM;

Deep-Dive with AI

DocumentsMOSFET OptiMOS™ and StrongIRFET™FIT Report - IRF100B202+5

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF100B202
Current - Continuous Drain (Id) @ 25°C97 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]116 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]4476 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)221 W
Rds On (Max) @ Id, Vgs8.6 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1741$ 1.93
Tube 1$ 2.65
10$ 1.71
100$ 1.17
500$ 0.95
1000$ 0.87
2000$ 0.81
5000$ 0.80
NewarkEach 1$ 2.69
10$ 1.40
100$ 1.17
500$ 1.07
1000$ 1.06
2500$ 1.04
12000$ 1.01

Description

General part information

IRF100 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.