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TO-220AB PKG
Discrete Semiconductor Products

IRF100B201

Active
INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 4.2 MOHM;

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Search across all available documentation for this part.

DocumentsData Sheet - IRF100B201Infineon-MA005548183-MaterialContentSheet-v01_00-EN+6
TO-220AB PKG
Discrete Semiconductor Products

IRF100B201

Active
INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 4.2 MOHM;

Deep-Dive with AI

DocumentsData Sheet - IRF100B201Infineon-MA005548183-MaterialContentSheet-v01_00-EN+6

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF100B201
Current - Continuous Drain (Id) @ 25°C192 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs255 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]9500 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C, 155 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)441 W
Rds On (Max) @ Id, Vgs4.2 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

IRF100 Series

PartVgs(th) (Max) @ IdRds On (Max) @ Id, VgsMounting TypeFET TypeDrain to Source Voltage (Vdss)Operating Temperature [Max]Operating Temperature [Min]Current - Continuous Drain (Id) @ 25°CTechnologyDrive Voltage (Max Rds On, Min Rds On)Package / CaseInput Capacitance (Ciss) (Max) @ Vds [Max]Power Dissipation (Max)Vgs (Max)Gate Charge (Qg) (Max) @ VgsSupplier Device PackageGate Charge (Qg) (Max) @ Vgs [Max]
STMICROELECTRONICS L4941BDT-TR
INFINEON
IRF100S201
4 V
4.2 mOhm
Surface Mount
N-Channel
100 V
175 °C
-55 °C
192 A
MOSFET (Metal Oxide)
10 V
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
9500 pF
441 W
20 V
255 nC
TO-247-3 AC EP
INFINEON
IRF100P219XKMA1
3.8 V
1.7 mOhm
Through Hole
N-Channel
100 V
175 °C
-55 °C
203 A
MOSFET (Metal Oxide)
6 V
10 V
TO-247-3
12020 pF
341 W
20 V
TO-247AC
270 nC
TO-220AB PKG
INFINEON
IRF100B201
4 V
4.2 mOhm
Through Hole
N-Channel
100 V
155 °C
175 °C
-55 °C
192 A
MOSFET (Metal Oxide)
10 V
TO-220-3
9500 pF
441 W
20 V
255 nC
TO-220AB
TO-220AB PKG
INFINEON
IRF100B202
4 V
8.6 mOhm
Through Hole
N-Channel
100 V
175 °C
-55 °C
97 A
MOSFET (Metal Oxide)
10 V
TO-220-3
4476 pF
221 W
20 V
TO-220AB
116 nC
TO-247-3 AC EP
INFINEON
IRF100P218XKMA1
3.8 V
1.28 mOhm
Through Hole
N-Channel
100 V
175 °C
-55 °C
209 A
MOSFET (Metal Oxide)
6 V
10 V
TO-247-3
25000 pF
556 W
20 V
TO-247AC
555 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1064$ 2.11
Tube 1$ 4.57
10$ 3.03
100$ 2.15
500$ 1.77
1000$ 1.68

Description

General part information

IRF100 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.