IRF100 Series

Manufacturer: INFINEON

Catalog

IR MOSFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 4.2 MOHM;

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]
INFINEON IRF100S201	4 V	4.2 mOhm	Surface Mount	N-Channel	100 V	175 °C	-55 °C	192 A	MOSFET (Metal Oxide)	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	9500 pF	441 W	20 V	255 nC
INFINEON IRF100P219XKMA1	3.8 V	1.7 mOhm	Through Hole	N-Channel	100 V	175 °C	-55 °C	203 A	MOSFET (Metal Oxide)	6 V 10 V	TO-247-3	12020 pF	341 W	20 V		TO-247AC	270 nC
INFINEON IRF100B201	4 V	4.2 mOhm	Through Hole	N-Channel	100 V	155 °C 175 °C	-55 °C	192 A	MOSFET (Metal Oxide)	10 V	TO-220-3	9500 pF	441 W	20 V	255 nC	TO-220AB
INFINEON IRF100B202	4 V	8.6 mOhm	Through Hole	N-Channel	100 V	175 °C	-55 °C	97 A	MOSFET (Metal Oxide)	10 V	TO-220-3	4476 pF	221 W	20 V		TO-220AB	116 nC
INFINEON IRF100P218XKMA1	3.8 V	1.28 mOhm	Through Hole	N-Channel	100 V	175 °C	-55 °C	209 A	MOSFET (Metal Oxide)	6 V 10 V	TO-247-3	25000 pF	556 W	20 V		TO-247AC	555 nC