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TO-18
Discrete Semiconductor Products

MX2N4859

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Microchip Technology

J-FET N-CHANNEL DEPLETION MODE 30V TO 40V, 0.08A TO 0.175A

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TO-18
Discrete Semiconductor Products

MX2N4859

Active
Microchip Technology

J-FET N-CHANNEL DEPLETION MODE 30V TO 40V, 0.08A TO 0.175A

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMX2N4859
Current - Drain (Idss) @ Vds (Vgs=0)175 mA, 15 V
Drain to Source Voltage (Vdss)30 V
FET TypeN-Channel
GradeMilitary
Input Capacitance (Ciss) (Max) @ Vds18 pF
Mounting TypeThrough Hole
Package / CaseTO-18-3 Metal Can, TO-206AA
Power - Max [Max]360 mW
QualificationMIL-PRF-19500/385
Resistance - RDS(On)25 Ohms
Supplier Device PackageTO-18
Supplier Device PackageTO-206AA
Voltage - Breakdown (V(BR)GSS)30 V
Voltage - Cutoff (VGS off) @ Id10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 49.67
Microchip DirectN/A 1$ 53.50
NewarkEach 100$ 49.67
500$ 47.77

Description

General part information

2N4859UB-JFET-NChannel Series

This specification covers the performance requirements for N-channel, depletion mode, silicon 2N4856 through 2N4861 J-FET (Junction Field Effect transistor). Four levels of product assurance are provided for each device (JAN, JANTX, JANTXV, and JANS) as specified in MIL-PRF-19500/385. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device package outlines are as follows: TO-18 (no suffix) and surface mount (UB suffix) for all encapsulated device types.

Documents

Technical documentation and resources