2N4859UB-JFET-NChannel Series

J-FET N-Channel Depletion Mode 30V to 40V, 0.08A to 0.175A

Catalog

J-FET N-Channel Depletion Mode 30V to 40V, 0.08A to 0.175A

Part	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Package / Case	Voltage - Breakdown (V(BR)GSS)	Drain to Source Voltage (Vdss)	Current - Drain (Idss) @ Vds (Vgs=0)	Supplier Device Package	Supplier Device Package	Mounting Type	Qualification	Resistance - RDS(On)	Grade	FET Type	Voltage - Cutoff (VGS off) @ Id
Microchip Technology MX2N4859	18 pF	360 mW	TO-18-3 Metal Can TO-206AA	30 V	30 V	15 V 175 mA	TO-18	TO-206AA	Through Hole	MIL-PRF-19500/385	25 Ohms	Military	N-Channel	10 V
Microchip Technology 2N4859UB	18 pF	360 mW	3-SMD No Lead	30 V	30 V	15 V 175 mA	UB		Surface Mount		25 Ohms		N-Channel	10 V
Microchip Technology 2N4859UB/TR	18 pF	360 mW	3-SMD No Lead	30 V	30 V	15 V 175 mA	UB		Surface Mount		25 Ohms		N-Channel	10 V

Catalog

J-FET N-Channel Depletion Mode 30V to 40V, 0.08A to 0.175A

Key Features

- The device package outlines are as follows: TO-18 (no suffix) and surface mount (UB suffix) for all encapsulated device types.

Description

This specification covers the performance requirements for N-channel, depletion mode, silicon 2N4856 through 2N4861 J-FET (Junction Field Effect transistor). Four levels of product assurance are provided for each device (JAN, JANTX, JANTXV, and JANS) as specified in MIL-PRF-19500/385. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device package outlines are as follows: TO-18 (no suffix) and surface mount (UB suffix) for all encapsulated device types.