Discrete Semiconductor Products
STL9P3LLH6
ActiveSTMicroelectronics
P-CHANNEL -30 V, 12 MOHM TYP., -9 A STRIPFET H6 POWER MOSFET IN A POWERFLAT 3.3 X 3.3 PACKAGE
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Discrete Semiconductor Products
STL9P3LLH6
ActiveSTMicroelectronics
P-CHANNEL -30 V, 12 MOHM TYP., -9 A STRIPFET H6 POWER MOSFET IN A POWERFLAT 3.3 X 3.3 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STL9P3LLH6 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 24 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2615 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 3 W |
| Rds On (Max) @ Id, Vgs | 15 mOhm |
| Supplier Device Package | PowerFlat™ (3.3x3.3) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STL9P3LLH6 Series
This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.
Documents
Technical documentation and resources