STL9P3LLH6 Series

P-channel -30 V, 12 mOhm typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package

Catalog

P-channel -30 V, 12 mOhm typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package
STMicroelectronics STL9P3LLH6	20 V	30 V	P-Channel	15 mOhm	MOSFET (Metal Oxide)	8-PowerVDFN	4.5 V 10 V	2615 pF	24 nC	Surface Mount	9 A	3 W	1 V	150 °C	-55 °C	PowerFlat™ (3.3x3.3)

Catalog

P-channel -30 V, 12 mOhm typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package

Description

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.