Discrete Semiconductor Products
STLD200N4F6AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE N-CHANNEL 40 V, 1.27 MOHM TYP., 120 A STRIPFET F6 POWER MOSFET IN A POWERFLAT 5X6 DUAL SIDE COOLING PACKAGE
Discrete Semiconductor Products
STLD200N4F6AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE N-CHANNEL 40 V, 1.27 MOHM TYP., 120 A STRIPFET F6 POWER MOSFET IN A POWERFLAT 5X6 DUAL SIDE COOLING PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STLD200N4F6AG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 120 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 6.5 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 172 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 10700 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerWDFN |
| Power Dissipation (Max) [Max] | 158 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 1.5 mOhm |
| Supplier Device Package | PowerFlat™ (5x6) Dual Side |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STLD200N4F6AG Series
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.
Documents
Technical documentation and resources