Discrete Semiconductor Products

STD155N3LH6

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STMicroelectronics

N-CHANNEL 30 V, 0.0024 OHM, 80 A STRIPFET(TM) VI DEEPGATE(TM) POWER MOSFET IN DPAK PACKAGE

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DocumentsSTD155N3LH6 | Datasheet AN4191 +8

Discrete Semiconductor Products

STD155N3LH6

Active

STMicroelectronics

N-CHANNEL 30 V, 0.0024 OHM, 80 A STRIPFET(TM) VI DEEPGATE(TM) POWER MOSFET IN DPAK PACKAGE

Deep-Dive with AI

DocumentsSTD155N3LH6 | Datasheet AN4191 +8

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD155N3LH6

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	80 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	110 W
Rds On (Max) @ Id, Vgs	3 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

STD155N3LH6 Series

N-channel 30 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Supplier Device Package	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id
STMicroelectronics STD155N3LH6	MOSFET (Metal Oxide)	3800 pF	5 V 10 V	N-Channel	80 nC	3 mOhm	30 V	110 W	175 °C	-55 °C	Surface Mount	TO-252 (DPAK)	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.31

Description

General part information

STD155N3LH6 Series

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.