STD155N3LH6 Series

N-channel 30 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package

Catalog

N-channel 30 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Supplier Device Package	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id
STMicroelectronics STD155N3LH6	MOSFET (Metal Oxide)	3800 pF	5 V 10 V	N-Channel	80 nC	3 mOhm	30 V	110 W	175 °C	-55 °C	Surface Mount	TO-252 (DPAK)	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	2.5 V

Catalog

N-channel 30 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package

Description

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.