Discrete Semiconductor Products

BD682

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TRANSISTOR, PNP, -100V, -4A, SOT32

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Discrete Semiconductor Products

Active

TRANSISTOR, PNP, -100V, -4A, SOT32

Technical Specifications

Parameters and characteristics for this part

Specification	BD682

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	500 çA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	750
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	40 W
Supplier Device Package	SOT-32-3
Transistor Type	PNP - Darlington
Vce Saturation (Max) @ Ib, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

PNP power Darlington transistor

Part	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Package / Case	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type
STMicroelectronics BD682	40 W	500 çA	SOT-32-3	2.5 V	150 °C	4 A	TO-126-3 TO-225AA	Through Hole	100 V	750	PNP - Darlington

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The devices are manufactured in planar base island technology with monolithic Darlington configuration.

Technical documentation and resources