Catalog
PNP power Darlington transistor
Description
AI
The devices are manufactured in planar base island technology with monolithic Darlington configuration.
Beta
⌘K
PNP power Darlington transistor
PNP power Darlington transistor
| Part | Power - Max [Max] | Current - Collector Cutoff (Max) [Max] | Supplier Device Package | Vce Saturation (Max) @ Ib, Ic | Operating Temperature | Current - Collector (Ic) (Max) [Max] | Package / Case | Mounting Type | Voltage - Collector Emitter Breakdown (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Transistor Type |
|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 40 W | 500 çA | SOT-32-3 | 2.5 V | 150 °C | 4 A | TO-126-3 TO-225AA | Through Hole | 100 V | 750 | PNP - Darlington |