Discrete Semiconductor Products
STB24N65M2
ObsoleteSTMicroelectronics
N-CHANNEL 650 V, 0.185 OHM TYP., 16 A MDMESH M2 POWER MOSFET IN D2PAK PACKAGE
Discrete Semiconductor Products
STB24N65M2
ObsoleteSTMicroelectronics
N-CHANNEL 650 V, 0.185 OHM TYP., 16 A MDMESH M2 POWER MOSFET IN D2PAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STB24N65M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 16 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 150 W |
| Rds On (Max) @ Id, Vgs | 230 mOhm |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
STB24N65M2 Series
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources