Discrete Semiconductor Products

STB24NM65N

Obsolete

MOSFET N-CH 650V 19A D2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 650V 19A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STB24NM65N

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	70 nC
Input Capacitance (Ciss) (Max) @ Vds	2500 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Vgs (Max)	Package / Case	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature
STMicroelectronics STB24N65M2	MOSFET (Metal Oxide)	4 V	1060 pF	29 nC	150 W	150 °C	-55 °C	N-Channel	25 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	D2PAK	230 mOhm	650 V	16 A	10 V
STMicroelectronics STB24NM65N	MOSFET (Metal Oxide)	4 V	2500 pF					N-Channel	25 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	D2PAK	190 mOhm	650 V	19 A	10 V	70 nC	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 3.74

General part information

N-Channel 650 V 19A (Tc) 160W (Tc) Surface Mount D2PAK

Technical documentation and resources