Discrete Semiconductor Products

S4D10120E

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DIODE SIL CARBIDE 1.2KV 10A DPAK

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Discrete Semiconductor Products

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DIODE SIL CARBIDE 1.2KV 10A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	S4D10120E

Capacitance @ Vr, F	772 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	30 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	DPAK
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Package / Case	Speed	Technology	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Supplier Device Package	Current - Reverse Leakage @ Vr	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)
SMC Diode Solutions S4D10120H	TO-247-2	No Recovery Time	SiC (Silicon Carbide) Schottky	1.8 V	772 pF	TO-247AC	30 µA	Through Hole	175 ░C	-55 C	1.2 kV	10 A
SMC Diode Solutions S4D10120E	DPAK (2 Leads + Tab) SC-63 TO-252-3	No Recovery Time	SiC (Silicon Carbide) Schottky	1.8 V	772 pF	DPAK	30 µA	Surface Mount	175 ░C	-55 C	1.2 kV	10 A
SMC Diode Solutions S4D10120A	TO-220-2	No Recovery Time	SiC (Silicon Carbide) Schottky	1.8 V	772 pF	TO-220AC (TO-220-2)	30 µA	Through Hole	175 ░C	-55 C	1.2 kV	10 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 10A Surface Mount DPAK

Technical documentation and resources