S4D1012 Series

Catalog

DIODE SIL CARB 1.2KV 10A TO247AC

Part	Speed	Mounting Type	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Package / Case	Technology
SMC Diode Solutions S4D10120H	500 mA	Through Hole	30 µA	10 A	175 ░C	-55 °C	TO-247AC	1.2 kV	1.8 V	772 pF	TO-247-2	SiC (Silicon Carbide) Schottky
SMC Diode Solutions S4D10120E	500 mA	Surface Mount	30 µA	10 A	175 ░C	-55 °C	DPAK	1.2 kV	1.8 V	772 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	SiC (Silicon Carbide) Schottky
SMC Diode Solutions S4D10120A	500 mA	Through Hole	30 µA	10 A	175 ░C	-55 °C	TO-220AC (TO-220-2)	1.2 kV	1.8 V	772 pF	TO-220-2	SiC (Silicon Carbide) Schottky
SMC Diode Solutions S4D10120L1	500 mA	Surface Mount	30 µA	10 A	175 ░C	-55 °C	5-DFN (8x8)	1.2 kV	1.8 V	772 pF	4-VSFN Exposed Pad	SiC (Silicon Carbide) Schottky