Discrete Semiconductor Products

S4D10120L1

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DIODE SIL CARBIDE 1.2KV 10A 5DFN

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Discrete Semiconductor Products

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DIODE SIL CARBIDE 1.2KV 10A 5DFN

Technical Specifications

Parameters and characteristics for this part

Specification	S4D10120L1

Capacitance @ Vr, F	772 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	30 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	4-VSFN Exposed Pad
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	5-DFN (8x8)
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Speed	Mounting Type	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Package / Case	Technology
SMC Diode Solutions S4D10120H	500 mA	Through Hole	30 µA	10 A	175 ░C	-55 °C	TO-247AC	1.2 kV	1.8 V	772 pF	TO-247-2	SiC (Silicon Carbide) Schottky
SMC Diode Solutions S4D10120E	500 mA	Surface Mount	30 µA	10 A	175 ░C	-55 °C	DPAK	1.2 kV	1.8 V	772 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	SiC (Silicon Carbide) Schottky
SMC Diode Solutions S4D10120A	500 mA	Through Hole	30 µA	10 A	175 ░C	-55 °C	TO-220AC (TO-220-2)	1.2 kV	1.8 V	772 pF	TO-220-2	SiC (Silicon Carbide) Schottky
SMC Diode Solutions S4D10120L1	500 mA	Surface Mount	30 µA	10 A	175 ░C	-55 °C	5-DFN (8x8)	1.2 kV	1.8 V	772 pF	4-VSFN Exposed Pad	SiC (Silicon Carbide) Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 10A Surface Mount 5-DFN (8x8)

Technical documentation and resources