Discrete Semiconductor Products

STP100N8F6

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STMicroelectronics

N-CHANNEL 80 V, 0.008 OHM TYP., 100 A, STRIPFET F6 POWER MOSFET IN A TO-220 PACKAGE

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DocumentsSTP100N8F6 | Datasheet +12

Discrete Semiconductor Products

STP100N8F6

Active

STMicroelectronics

N-CHANNEL 80 V, 0.008 OHM TYP., 100 A, STRIPFET F6 POWER MOSFET IN A TO-220 PACKAGE

Deep-Dive with AI

DocumentsSTP100N8F6 | Datasheet +12

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP100N8F6

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	100 nC
Input Capacitance (Ciss) (Max) @ Vds	5955 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	176 W
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

STP100N8F6 Series

N-channel 80 V, 0.008 Ohm typ., 100 A, STripFET F6 Power MOSFET in a TO-220 package

Part	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	FET Type	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Technology	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
STMicroelectronics STP100N8F6	9 mOhm	TO-220-3	20 V	N-Channel	Through Hole	TO-220	5955 pF	10 V	100 nC	MOSFET (Metal Oxide)	176 W	4 V	175 °C	-55 °C	100 A	80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	23958	$ 2.13

Description

General part information

STP100N8F6 Series

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.