STP100N8F6 Series

N-channel 80 V, 0.008 Ohm typ., 100 A, STripFET F6 Power MOSFET in a TO-220 package

Catalog

N-channel 80 V, 0.008 Ohm typ., 100 A, STripFET F6 Power MOSFET in a TO-220 package

Part	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	FET Type	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Technology	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
STMicroelectronics STP100N8F6	9 mOhm	TO-220-3	20 V	N-Channel	Through Hole	TO-220	5955 pF	10 V	100 nC	MOSFET (Metal Oxide)	176 W	4 V	175 °C	-55 °C	100 A	80 V

Catalog

N-channel 80 V, 0.008 Ohm typ., 100 A, STripFET F6 Power MOSFET in a TO-220 package

Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.