Discrete Semiconductor Products

BYC15-1200PQ

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DIODE GEN PURP 1.2KV 15A TO220AC

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Discrete Semiconductor Products

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DIODE GEN PURP 1.2KV 15A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	BYC15-1200PQ

Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	61 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	3.2 V

Part	Operating Temperature - Junction [Max]	Technology	Voltage - Forward (Vf) (Max) @ If [Max]	Reverse Recovery Time (trr)	Speed	Current - Reverse Leakage @ Vr	Supplier Device Package	Package / Case	Current - Average Rectified (Io)	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If
WeEn Semiconductors BYC15-1200PQ	175 ░C	Standard	3.2 V	61 ns	200 mA 500 ns	100 µA	TO-220AC	TO-220-2	15 A	Through Hole	1.2 kV
WeEn Semiconductors BYC15X-600PQ	175 ░C	Standard	3.2 V	18 ns	200 mA 500 ns	10 µA	TO-220F	TO-220-2 Full Pack Isolated Tab	15 A	Through Hole	600 V
WeEn Semiconductors BYC15X-600,127	150 °C	Standard		55 ns	200 mA 500 ns	200 µA	TO-220FP	TO-220-2 Full Pack Isolated Tab	15 A	Through Hole	500 V	2.9 V
WeEn Semiconductors BYC15-600,127	150 °C	Standard		55 ns	200 mA 500 ns	200 µA	TO-220AC	TO-220-2	15 A	Through Hole	500 V	2.9 V
WeEn Semiconductors BYC15-600PQ	175 ░C	Standard	3.2 V	18 ns	200 mA 500 ns	10 µA	TO-220AC	TO-220-2	15 A	Through Hole	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 15A Through Hole TO-220AC

Technical documentation and resources

No documents available