Discrete Semiconductor Products

BYC15X-600,127

Active

DIODE GEN PURP 500V 15A TO220FP

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE GEN PURP 500V 15A TO220FP

Technical Specifications

Parameters and characteristics for this part

Specification	BYC15X-600,127

Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Package / Case	TO-220-2 Full Pack, Isolated Tab
Reverse Recovery Time (trr)	55 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-220FP
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	500 V
Voltage - Forward (Vf) (Max) @ If	2.9 V

Part	Operating Temperature - Junction [Max]	Technology	Voltage - Forward (Vf) (Max) @ If [Max]	Reverse Recovery Time (trr)	Speed	Current - Reverse Leakage @ Vr	Supplier Device Package	Package / Case	Current - Average Rectified (Io)	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If
WeEn Semiconductors BYC15-1200PQ	175 ░C	Standard	3.2 V	61 ns	200 mA 500 ns	100 µA	TO-220AC	TO-220-2	15 A	Through Hole	1.2 kV
WeEn Semiconductors BYC15X-600PQ	175 ░C	Standard	3.2 V	18 ns	200 mA 500 ns	10 µA	TO-220F	TO-220-2 Full Pack Isolated Tab	15 A	Through Hole	600 V
WeEn Semiconductors BYC15X-600,127	150 °C	Standard		55 ns	200 mA 500 ns	200 µA	TO-220FP	TO-220-2 Full Pack Isolated Tab	15 A	Through Hole	500 V	2.9 V
WeEn Semiconductors BYC15-600,127	150 °C	Standard		55 ns	200 mA 500 ns	200 µA	TO-220AC	TO-220-2	15 A	Through Hole	500 V	2.9 V
WeEn Semiconductors BYC15-600PQ	175 ░C	Standard	3.2 V	18 ns	200 mA 500 ns	10 µA	TO-220AC	TO-220-2	15 A	Through Hole	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 500 V 15A Through Hole TO-220FP

Technical documentation and resources

No documents available