IPB025N10N3GATMA1
ActiveOPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; D2PAK 7PIN TO-263 7PIN PACKAGE; 2.5 MOHM;
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IPB025N10N3GATMA1
ActiveOPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; D2PAK 7PIN TO-263 7PIN PACKAGE; 2.5 MOHM;
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPB025N10N3GATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 180 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 6 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 206 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 14800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Power Dissipation (Max) | 300 W |
| Rds On (Max) @ Id, Vgs | 2.5 mOhm |
| Supplier Device Package | PG-TO263-7 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPB025 Series
The IPB025N10N3 G is a 100V N-channel Power MOSFET that offers superior solutions for high efficiency and high power-density SMPS. Compared to other transistors, this MOSFET achieves a reduction of 30% in both RDS (on) and FOM (Figure of Merit). The OptiMOS™ MOSFET offers industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
Documents
Technical documentation and resources
