Discrete Semiconductor Products

IPB025N10N3GE8187ATMA1

NRND

MOSFET N-CH 100V 180A TO263-7

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Discrete Semiconductor Products

NRND

MOSFET N-CH 100V 180A TO263-7

Technical Specifications

Parameters and characteristics for this part

Specification	IPB025N10N3GE8187ATMA1

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	206 nC
Input Capacitance (Ciss) (Max) @ Vds	14800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK (6 Leads + Tab)
Power Dissipation (Max)	300 W
Rds On (Max) @ Id, Vgs	2.5 mOhm
Supplier Device Package	PG-TO263-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	3.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs(th) (Max) @ Id [Max]	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id
INFINEON IPB025N10N3GE8187ATMA1	206 nC	MOSFET (Metal Oxide)	3.5 V	20 V	D2PAK (6 Leads + Tab) TO-263-7	100 V	Surface Mount	175 °C	-55 °C	N-Channel	6 V 10 V	14800 pF	PG-TO263-7	300 W	180 A	2.5 mOhm
INFINEON IPB025N10N3GATMA1	206 nC	MOSFET (Metal Oxide)	3.5 V	20 V	D2PAK (6 Leads + Tab) TO-263-7	100 V	Surface Mount	175 °C	-55 °C	N-Channel	6 V 10 V	14800 pF	PG-TO263-7	300 W	180 A	2.5 mOhm
INFINEON IPB025N08N3GATMA1	206 nC	MOSFET (Metal Oxide)		20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	80 V	Surface Mount	175 °C	-55 °C	N-Channel	6 V 10 V			300 W	120 A	2.5 mOhm	14200 pF	3.5 V

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General part information

N-Channel 100 V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7

Technical documentation and resources