IPB025 Series

Manufacturer: INFINEON

Catalog

MOSFET N-CH 100V 180A TO263-7

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs(th) (Max) @ Id [Max]	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id
INFINEON IPB025N10N3GE8187ATMA1	206 nC	MOSFET (Metal Oxide)	3.5 V	20 V	D2PAK (6 Leads + Tab) TO-263-7	100 V	Surface Mount	175 °C	-55 °C	N-Channel	6 V 10 V	14800 pF	PG-TO263-7	300 W	180 A	2.5 mOhm
INFINEON IPB025N10N3GATMA1	206 nC	MOSFET (Metal Oxide)	3.5 V	20 V	D2PAK (6 Leads + Tab) TO-263-7	100 V	Surface Mount	175 °C	-55 °C	N-Channel	6 V 10 V	14800 pF	PG-TO263-7	300 W	180 A	2.5 mOhm
INFINEON IPB025N08N3GATMA1	206 nC	MOSFET (Metal Oxide)		20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	80 V	Surface Mount	175 °C	-55 °C	N-Channel	6 V 10 V			300 W	120 A	2.5 mOhm	14200 pF	3.5 V