Integrated Circuits (ICs)
IRS2101SPBF
ObsoleteINFINEON
IC: DRIVER; MOSFET HALF-BRIDGE; HIGH-/LOW-SIDE,GATE DRIVER; SO8
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Integrated Circuits (ICs)
IRS2101SPBF
ObsoleteINFINEON
IC: DRIVER; MOSFET HALF-BRIDGE; HIGH-/LOW-SIDE,GATE DRIVER; SO8
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IRS2101SPBF |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Source, Sink) [custom] | 600 mA |
| Current - Peak Output (Source, Sink) [custom] | 290 mA |
| Driven Configuration | High-Side or Low-Side |
| Gate Type | N-Channel MOSFET, IGBT, MOSFET (N-Channel) |
| High Side Voltage - Max (Bootstrap) [Max] | 600 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH | 2.5 V, 0.8 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 0.154 in |
| Package / Case | 8-SOIC |
| Package / Case | 3.9 mm |
| Rise / Fall Time (Typ) [custom] | 70 ns |
| Rise / Fall Time (Typ) [custom] | 35 ns |
| Supplier Device Package | 8-SOIC |
| Voltage - Supply [Max] | 20 V |
| Voltage - Supply [Min] | 10 VDC |
| Part | High Side Voltage - Max (Bootstrap) [Max] | Input Type | Number of Drivers | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Driven Configuration | Logic Voltage - VIL, VIH | Voltage - Supply [Max] | Voltage - Supply [Min] | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Gate Type | Channel Type | Supplier Device Package | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 600 V | Non-Inverting | 2 | 8-DIP (0.300" 7.62mm) | -40 °C | 150 °C | Through Hole | High-Side or Low-Side | 0.8 V 2.5 V | 20 V | 10 VDC | 70 ns | 35 ns | IGBT MOSFET (N-Channel) | Independent | 8-PDIP | 600 mA | 290 mA | ||
 INFINEON | 600 V | Non-Inverting | 2 | 8-SOIC | -40 °C | 150 °C | Surface Mount | High-Side or Low-Side | 0.8 V 2.5 V | 20 V | 10 VDC | 70 ns | 35 ns | IGBT MOSFET (N-Channel) N-Channel MOSFET | Independent | 8-SOIC | 600 mA | 290 mA | 0.154 in | 3.9 mm |
INFINEON | 600 V | Non-Inverting | 2 | 8-SOIC | -40 °C | 150 °C | Surface Mount | High-Side or Low-Side | 0.8 V 2.5 V | 20 V | 10 VDC | 70 ns | 35 ns | IGBT MOSFET (N-Channel) N-Channel MOSFET | Independent | 8-SOIC | 600 mA | 290 mA | 0.154 in | 3.9 mm |
INFINEON | 600 V | Non-Inverting | 2 | 8-DIP (0.300" 7.62mm) | -40 °C | 150 °C | Through Hole | High-Side or Low-Side | 0.8 V 2.5 V | 20 V | 10 VDC | 70 ns | 35 ns | IGBT MOSFET (N-Channel) N-Channel MOSFET | Independent | 8-PDIP | 600 mA | 290 mA |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IRS2101 Series
High-Side or Low-Side Gate Driver IC Non-Inverting 8-SOIC
Documents
Technical documentation and resources