Integrated Circuits (ICs)

IRS2101PBF

Obsolete

IC GATE DRVR HI/LOW SIDE 8DIP

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Integrated Circuits (ICs)

Obsolete

IC GATE DRVR HI/LOW SIDE 8DIP

Technical Specifications

Parameters and characteristics for this part

Specification	IRS2101PBF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	600 mA
Current - Peak Output (Source, Sink) [custom]	290 mA
Driven Configuration	High-Side or Low-Side
Gate Type	IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.5 V, 0.8 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-DIP (0.300", 7.62mm)
Rise / Fall Time (Typ) [custom]	70 ns
Rise / Fall Time (Typ) [custom]	35 ns
Supplier Device Package	8-PDIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	High Side Voltage - Max (Bootstrap) [Max]	Input Type	Number of Drivers	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Driven Configuration	Logic Voltage - VIL, VIH	Voltage - Supply [Max]	Voltage - Supply [Min]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Gate Type	Channel Type	Supplier Device Package	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case	Package / Case
INFINEON IRS2101PBF	600 V	Non-Inverting	2	8-DIP (0.300" 7.62mm)	-40 °C	150 °C	Through Hole	High-Side or Low-Side	0.8 V 2.5 V	20 V	10 VDC	70 ns	35 ns	IGBT MOSFET (N-Channel)	Independent	8-PDIP	600 mA	290 mA
INFINEON IRS2101STRPBF	600 V	Non-Inverting	2	8-SOIC	-40 °C	150 °C	Surface Mount	High-Side or Low-Side	0.8 V 2.5 V	20 V	10 VDC	70 ns	35 ns	IGBT MOSFET (N-Channel) N-Channel MOSFET	Independent	8-SOIC	600 mA	290 mA	0.154 in	3.9 mm
INFINEON IRS2101SPBF	600 V	Non-Inverting	2	8-SOIC	-40 °C	150 °C	Surface Mount	High-Side or Low-Side	0.8 V 2.5 V	20 V	10 VDC	70 ns	35 ns	IGBT MOSFET (N-Channel) N-Channel MOSFET	Independent	8-SOIC	600 mA	290 mA	0.154 in	3.9 mm
INFINEON IRS2101PBF	600 V	Non-Inverting	2	8-DIP (0.300" 7.62mm)	-40 °C	150 °C	Through Hole	High-Side or Low-Side	0.8 V 2.5 V	20 V	10 VDC	70 ns	35 ns	IGBT MOSFET (N-Channel) N-Channel MOSFET	Independent	8-PDIP	600 mA	290 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Side or Low-Side Gate Driver IC Non-Inverting 8-PDIP

Technical documentation and resources