IRS2101 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR HI/LOW SIDE 8DIP

Part	High Side Voltage - Max (Bootstrap) [Max]	Input Type	Number of Drivers	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Driven Configuration	Logic Voltage - VIL, VIH	Voltage - Supply [Max]	Voltage - Supply [Min]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Gate Type	Channel Type	Supplier Device Package	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case	Package / Case
INFINEON IRS2101PBF	600 V	Non-Inverting	2	8-DIP (0.300" 7.62mm)	-40 °C	150 °C	Through Hole	High-Side or Low-Side	0.8 V 2.5 V	20 V	10 VDC	70 ns	35 ns	IGBT MOSFET (N-Channel)	Independent	8-PDIP	600 mA	290 mA
INFINEON IRS2101STRPBF	600 V	Non-Inverting	2	8-SOIC	-40 °C	150 °C	Surface Mount	High-Side or Low-Side	0.8 V 2.5 V	20 V	10 VDC	70 ns	35 ns	IGBT MOSFET (N-Channel) N-Channel MOSFET	Independent	8-SOIC	600 mA	290 mA	0.154 in	3.9 mm
INFINEON IRS2101SPBF	600 V	Non-Inverting	2	8-SOIC	-40 °C	150 °C	Surface Mount	High-Side or Low-Side	0.8 V 2.5 V	20 V	10 VDC	70 ns	35 ns	IGBT MOSFET (N-Channel) N-Channel MOSFET	Independent	8-SOIC	600 mA	290 mA	0.154 in	3.9 mm
INFINEON IRS2101PBF	600 V	Non-Inverting	2	8-DIP (0.300" 7.62mm)	-40 °C	150 °C	Through Hole	High-Side or Low-Side	0.8 V 2.5 V	20 V	10 VDC	70 ns	35 ns	IGBT MOSFET (N-Channel) N-Channel MOSFET	Independent	8-PDIP	600 mA	290 mA