Discrete Semiconductor Products

RJU003N03T106

NRND

MOSFETS N-CH 30V 300MA SOT-323

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Discrete Semiconductor Products

NRND

MOSFETS N-CH 30V 300MA SOT-323

Technical Specifications

Parameters and characteristics for this part

Specification	RJU003N03T106

Current - Continuous Drain (Id) @ 25°C	300 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	24 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-323, SC-70
Power Dissipation (Max)	200 mW
Rds On (Max) @ Id, Vgs	1.1 Ohm
Supplier Device Package	UMT3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Vgs (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs	Grade	Qualification
Rohm Semiconductor RJU003N03T106	12 V	1.5 V	24 pF	UMT3	200 mW	MOSFET (Metal Oxide)	2.5 V	4.5 V	300 mA	SC-70 SOT-323	30 V	150 °C	N-Channel	Surface Mount	1.1 Ohm
Rohm Semiconductor RJU003N03FRAT106	12 V	1.5 V	24 pF	UMT3	200 mW	MOSFET (Metal Oxide)	2.5 V	4.5 V	300 mA	SC-70 SOT-323	30 V	150 °C	N-Channel	Surface Mount	1.1 Ohm	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 300mA (Ta) 200mW (Ta) Surface Mount UMT3

Technical documentation and resources