Discrete Semiconductor Products

SCT027H65G3AG

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STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 650 V, 29 MOHM TYP., 60 A IN AN H2PAK-7 PACKAGE

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Documents UM1575 +24

Discrete Semiconductor Products

SCT027H65G3AG

Active

STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 650 V, 29 MOHM TYP., 60 A IN AN H2PAK-7 PACKAGE

Deep-Dive with AI

Documents UM1575 +24

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCT027H65G3AG

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V, 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	48.6 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1277 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Power Dissipation (Max)	300 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	39.3 mOhm
Supplier Device Package	H2PAK-7
Vgs (Max) [Max]	18 V, -5 V
Vgs(th) (Max) @ Id	4.2 V

SCT027H65G3AG Series

Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package

Part	Supplier Device Package	Grade	Power Dissipation (Max)	Package / Case	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Qualification
STMicroelectronics SCT027H65G3AG	H2PAK-7	Automotive	300 W	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	Surface Mount	175 °C	-55 °C	4.2 V	15 V 18 V	650 V	-5 V 18 V	N-Channel	1277 pF	60 A	48.6 nC	39.3 mOhm	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	960	$ 15.10
Newark	Each (Supplied on Full Reel)	1000	$ 13.51
		2000	$ 13.25
		4000	$ 12.98
		6000	$ 12.59

Description

General part information

SCT027H65G3AG Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on)over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.