SCT027H65G3AG Series

Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package

Catalog

Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package

Part	Supplier Device Package	Grade	Power Dissipation (Max)	Package / Case	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Qualification
STMicroelectronics SCT027H65G3AG	H2PAK-7	Automotive	300 W	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	Surface Mount	175 °C	-55 °C	4.2 V	15 V 18 V	650 V	-5 V 18 V	N-Channel	1277 pF	60 A	48.6 nC	39.3 mOhm	AEC-Q101

Catalog

Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on)over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.