No image
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsGUNN Diode Anode MG1041-MG1058
Deep-Dive with AI
DocumentsGUNN Diode Anode MG1041-MG1058
Technical Specifications
Parameters and characteristics for this part
| Specification | MG1052-30 |
|---|---|
| Current - Max [Max] | 140 mA |
| Diode Type | PIN - Single |
| Package / Case | Stud |
| Power Dissipation (Max) | 10 mW |
| Voltage - Peak Reverse (Max) [Max] | 8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | N/A | 1 | $ 29.18 | |
| 50 | $ 27.97 | |||
| 100 | $ 26.32 | |||
| 250 | $ 25.15 | |||
| 500 | $ 24.18 | |||
| 1000 | $ 23.72 | |||
Description
General part information
MG1001-1060-C-to-W-Band-Gunn Series
GaAs Gunn diodes epi-down are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using propriety techniques resulting in ultra-low phase and 1/f noise. The diodes are available in a variety of microwave ceramic packages for operation from 9.5-25 GHz.
Documents
Technical documentation and resources