Catalog
CW-Epi-Up-Gunn
Key Features
• * High Reliability
• * Low-Phase Noise
• * 9.5-25.0 GHz
• * Pulsed and CW Designs to 20 mW
Description
AI
GaAs Gunn diodes epi-down are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using propriety techniques resulting in ultra-low phase and 1/f noise. The diodes are available in a variety of microwave ceramic packages for operation from 9.5-25 GHz.