Discrete Semiconductor Products
STH12N120K5-2
ActiveSTMicroelectronics
N-CHANNEL 1200 V, 0.62 OHM TYP., 12 A MDMESH K5 POWER MOSFET IN H2PAK-2 PACKAGE
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Discrete Semiconductor Products
STH12N120K5-2
ActiveSTMicroelectronics
N-CHANNEL 1200 V, 0.62 OHM TYP., 12 A MDMESH K5 POWER MOSFET IN H2PAK-2 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STH12N120K5-2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 44.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1370 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 250 W |
| Rds On (Max) @ Id, Vgs | 690 mOhm |
| Supplier Device Package | H2Pak-2 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STH12N120K5-2 Series
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Documents
Technical documentation and resources