STH12N120K5-2 Series

N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in H2PAK-2 package

Catalog

N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in H2PAK-2 package

Part	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Vgs (Max)	Package / Case
STMicroelectronics STH12N120K5-2	12 A	250 W	690 mOhm	Surface Mount	1370 pF	10 V	150 °C	-55 °C	1.2 kV	MOSFET (Metal Oxide)	44.2 nC	5 V	N-Channel	H2Pak-2	30 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Catalog

N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in H2PAK-2 package

Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.