Discrete Semiconductor Products

IPB65R095C7ATMA2

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INFINEON

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; D2PAK TO-263 PACKAGE; 95 MOHM; HIGHEST PERFORMANCE

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DocumentsTechnical Data Sheet EN

Discrete Semiconductor Products

IPB65R095C7ATMA2

Active

INFINEON

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; D2PAK TO-263 PACKAGE; 95 MOHM; HIGHEST PERFORMANCE

Deep-Dive with AI

DocumentsTechnical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB65R095C7ATMA2

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	45 nC
Input Capacitance (Ciss) (Max) @ Vds	2140 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	128 W
Rds On (Max) @ Id, Vgs	95 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

CoolMOS C7 Series

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
INFINEON IPL65R130C7AUMA1	35 nC	20 V	10 V	130 mOhm	102 W	PG-VSON-4	Surface Mount	650 V	4-PowerTSFN	1670 pF	4 V	15 A	MOSFET (Metal Oxide)	N-Channel	-40 °C	150 °C
INFINEON IPA65R190C7XKSA1		20 V	10 V			PG-TO220-FP	Through Hole	650 V	TO-220-3 Full Pack	1150 pF	4 V	8 A	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	23 nC	190 mOhm
INFINEON IPP60R180C7XKSA1	24 nC	20 V	10 V	180 mOhm	68 W	PG-TO220-3-1	Through Hole	600 V	TO-220-3		4 V	13 A	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C			1080 pF
INFINEON IPB65R095C7ATMA2		20 V	10 V	95 mOhm	128 W		Surface Mount	650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		4 V	24 A	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	45 nC		2140 pF
INFINEON IPP65R190C7FKSA1		20 V	10 V		72 W	PG-TO220-3	Through Hole	650 V	TO-220-3	1150 pF	4 V	13 A	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	23 nC	190 mOhm
INFINEON IPL60R065C7AUMA1		20 V	10 V	65 mOhm	180 W	PG-VSON-4-1	Surface Mount	600 V	4-PowerTSFN		4 V	29 A	MOSFET (Metal Oxide)	N-Channel	-40 °C	150 °C	68 nC		2850 pF
INFINEON IPA65R225C7XKSA1	20 nC	20 V	10 V	225 mOhm	29 W	PG-TO220-FP	Through Hole	650 V	TO-220-3 Full Pack	996 pF	4 V	7 A	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C
INFINEON IPA60R060C7XKSA1		20 V	10 V	60 mOhm	34 W	PG-TO220-FP	Through Hole	600 V	TO-220-3 Full Pack		4 V	16 A	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	68 nC		2850 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 6.01
		10	$ 4.03
		100	$ 2.91
		500	$ 2.43
	Digi-Reel®	1	$ 6.01
		10	$ 4.03
		100	$ 2.91
		500	$ 2.43
	N/A	2236	$ 5.11
	Tape & Reel (TR)	1000	$ 2.42
Mouser	N/A	1	$ 5.00
		10	$ 3.85
		25	$ 3.84
		100	$ 2.77
		500	$ 2.32
		1000	$ 2.29
		5000	$ 2.28

Description

General part information

CoolMOS C7 Series

Infineon’sCoolMOS™ C7 superjunction MOSFETseries is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet