Discrete Semiconductor Products

IPA65R190C7XKSA1

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INFINEON

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 FULLPAK PACKAGE; 190 MOHM; HIGHEST PERFORMANCE

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Discrete Semiconductor Products

IPA65R190C7XKSA1

Active

INFINEON

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 FULLPAK PACKAGE; 190 MOHM; HIGHEST PERFORMANCE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPA65R190C7XKSA1

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1150 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs [Max]	190 mOhm
Supplier Device Package	PG-TO220-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

CoolMOS C7 Series

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
INFINEON IPL65R130C7AUMA1	35 nC	20 V	10 V	130 mOhm	102 W	PG-VSON-4	Surface Mount	650 V	4-PowerTSFN	1670 pF	4 V	15 A	MOSFET (Metal Oxide)	N-Channel	-40 °C	150 °C
INFINEON IPA65R190C7XKSA1		20 V	10 V			PG-TO220-FP	Through Hole	650 V	TO-220-3 Full Pack	1150 pF	4 V	8 A	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	23 nC	190 mOhm
INFINEON IPP60R180C7XKSA1	24 nC	20 V	10 V	180 mOhm	68 W	PG-TO220-3-1	Through Hole	600 V	TO-220-3		4 V	13 A	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C			1080 pF
INFINEON IPB65R095C7ATMA2		20 V	10 V	95 mOhm	128 W		Surface Mount	650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		4 V	24 A	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	45 nC		2140 pF
INFINEON IPP65R190C7FKSA1		20 V	10 V		72 W	PG-TO220-3	Through Hole	650 V	TO-220-3	1150 pF	4 V	13 A	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	23 nC	190 mOhm
INFINEON IPL60R065C7AUMA1		20 V	10 V	65 mOhm	180 W	PG-VSON-4-1	Surface Mount	600 V	4-PowerTSFN		4 V	29 A	MOSFET (Metal Oxide)	N-Channel	-40 °C	150 °C	68 nC		2850 pF
INFINEON IPA65R225C7XKSA1	20 nC	20 V	10 V	225 mOhm	29 W	PG-TO220-FP	Through Hole	650 V	TO-220-3 Full Pack	996 pF	4 V	7 A	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C
INFINEON IPA60R060C7XKSA1		20 V	10 V	60 mOhm	34 W	PG-TO220-FP	Through Hole	600 V	TO-220-3 Full Pack		4 V	16 A	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	68 nC		2850 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.88
	Tube	500	$ 1.31
Mouser	N/A	1	$ 2.78
		25	$ 1.90
		100	$ 1.76
		500	$ 1.47
		1000	$ 1.06
Newark	Each	1	$ 2.51
		10	$ 1.97
		100	$ 1.42
		500	$ 1.29
		1000	$ 1.27
		2500	$ 1.15

Description

General part information

CoolMOS C7 Series

Infineon’sCoolMOS™ C7 superjunction MOSFETseries is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Documents

Technical documentation and resources

No documents available