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ONSEMI ISL9V3040P3
Discrete Semiconductor Products

IPP65R190C7FKSA1

Obsolete
INFINEON

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 PACKAGE; 190 MOHM; HIGHEST PERFORMANCE

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Search across all available documentation for this part.

DocumentsApplication Note ENMOSFET some key facts about avalanche+7
ONSEMI ISL9V3040P3
Discrete Semiconductor Products

IPP65R190C7FKSA1

Obsolete
INFINEON

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 PACKAGE; 190 MOHM; HIGHEST PERFORMANCE

Deep-Dive with AI

DocumentsApplication Note ENMOSFET some key facts about avalanche+7

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP65R190C7FKSA1
Current - Continuous Drain (Id) @ 25°C13 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1150 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)72 W
Rds On (Max) @ Id, Vgs [Max]190 mOhm
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

CoolMOS C7 Series

PartGate Charge (Qg) (Max) @ Vgs [Max]Vgs (Max)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsPower Dissipation (Max)Supplier Device PackageMounting TypeDrain to Source Voltage (Vdss)Package / CaseInput Capacitance (Ciss) (Max) @ Vds [Max]Vgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CTechnologyFET TypeOperating Temperature [Min]Operating Temperature [Max]Gate Charge (Qg) (Max) @ VgsRds On (Max) @ Id, Vgs [Max]Input Capacitance (Ciss) (Max) @ Vds
INFINEON IPL60R125P7AUMA1
INFINEON
IPL65R130C7AUMA1
35 nC
20 V
10 V
130 mOhm
102 W
PG-VSON-4
Surface Mount
650 V
4-PowerTSFN
1670 pF
4 V
15 A
MOSFET (Metal Oxide)
N-Channel
-40 °C
150 °C
PG-TO-220-FP
INFINEON
IPA65R190C7XKSA1
20 V
10 V
PG-TO220-FP
Through Hole
650 V
TO-220-3 Full Pack
1150 pF
4 V
8 A
MOSFET (Metal Oxide)
N-Channel
-55 °C
150 °C
23 nC
190 mOhm
ONSEMI ISL9V3040P3
INFINEON
IPP60R180C7XKSA1
24 nC
20 V
10 V
180 mOhm
68 W
PG-TO220-3-1
Through Hole
600 V
TO-220-3
4 V
13 A
MOSFET (Metal Oxide)
N-Channel
-55 °C
150 °C
1080 pF
MICROCHIP MIC29150-5.0WU
INFINEON
IPB65R095C7ATMA2
20 V
10 V
95 mOhm
128 W
Surface Mount
650 V
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
4 V
24 A
MOSFET (Metal Oxide)
N-Channel
-55 °C
150 °C
45 nC
2140 pF
ONSEMI ISL9V3040P3
INFINEON
IPP65R190C7FKSA1
20 V
10 V
72 W
PG-TO220-3
Through Hole
650 V
TO-220-3
1150 pF
4 V
13 A
MOSFET (Metal Oxide)
N-Channel
-55 °C
150 °C
23 nC
190 mOhm
IPL60R065C7AUMA1
INFINEON
IPL60R065C7AUMA1
20 V
10 V
65 mOhm
180 W
PG-VSON-4-1
Surface Mount
600 V
4-PowerTSFN
4 V
29 A
MOSFET (Metal Oxide)
N-Channel
-40 °C
150 °C
68 nC
2850 pF
PG-TO-220-FP
INFINEON
IPA65R225C7XKSA1
20 nC
20 V
10 V
225 mOhm
29 W
PG-TO220-FP
Through Hole
650 V
TO-220-3 Full Pack
996 pF
4 V
7 A
MOSFET (Metal Oxide)
N-Channel
-55 °C
150 °C
PG-TO-220-FP
INFINEON
IPA60R060C7XKSA1
20 V
10 V
60 mOhm
34 W
PG-TO220-FP
Through Hole
600 V
TO-220-3 Full Pack
4 V
16 A
MOSFET (Metal Oxide)
N-Channel
-55 °C
150 °C
68 nC
2850 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 181$ 3.30
MouserN/A 1$ 2.77
10$ 2.36
25$ 1.69
100$ 1.53
500$ 1.39
1000$ 1.20
2500$ 1.14
5000$ 1.11
NewarkEach 1$ 3.00
10$ 2.39
100$ 1.59
500$ 1.29
1000$ 1.15

Description

General part information

CoolMOS C7 Series

Infineon’sCoolMOS™ C7 superjunction MOSFETseries is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.