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TO-220-3
Discrete Semiconductor Products

BYC10-600CT,127

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WeEn Semiconductors

DIODE ARRAY GP 600V 10A TO220AB

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TO-220-3
Discrete Semiconductor Products

BYC10-600CT,127

Active
WeEn Semiconductors

DIODE ARRAY GP 600V 10A TO220AB

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBYC10-600CT,127
Current - Average Rectified (Io) (per Diode)10 A
Current - Reverse Leakage @ Vr100 µA
Diode Configuration1 Pair Common Cathode
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Package / CaseTO-220-3
Reverse Recovery Time (trr)50 ns
Speed500 ns, 200 mA
Supplier Device PackageTO-220AB
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If2.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 591$ 0.51
N/A 0$ 0.44
Tube 6000$ 0.46

Description

General part information

BYC10 Series

Diode Array 1 Pair Common Cathode 600 V 10A Through Hole TO-220-3

Documents

Technical documentation and resources

No documents available