Discrete Semiconductor Products

GP2T080A120H

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SIC MOSFETS SIC MOSFET 1200V 80MOHM TO-247-4L

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Discrete Semiconductor Products

Active

SIC MOSFETS SIC MOSFET 1200V 80MOHM TO-247-4L

Technical Specifications

Parameters and characteristics for this part

Specification	GP2T080A120H

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	1.2 kV
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	61 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1377 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	188 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	TO-247-4
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max) [Max]	Vgs (Max) [Min]	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
SemiQ GP2T080A120H	25 V	-10 V	4 V	175 °C	-55 °C	TO-247-4	100 mOhm	1.2 kV	TO-247-4	N-Channel	Through Hole	188 W	35 A	61 nC	1377 pF
SemiQ GP2T080A120U	25 V	-10 V	4 V	175 °C	-55 °C	TO-247-3	100 mOhm	1.2 kV	TO-247-3	N-Channel	Through Hole	188 W	35 A	58 nC	1377 pF

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General part information

N-Channel 1200 V 35A (Tc) 188W (Tc) Through Hole TO-247-4

Technical documentation and resources