Discrete Semiconductor Products

JANS2N3810L

Active

Microchip Technology

PNP TRANSISTOR

Deep-Dive with AI

Search across all available documentation for this part.

Discrete Semiconductor Products

JANS2N3810L

Active

Microchip Technology

PNP TRANSISTOR

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	JANS2N3810L

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	150
Grade	Military
Mounting Type	Through Hole
Package / Case	TO-78-6 Metal Can
Power - Max [Max]	350 mW
Qualification	MIL-PRF-19500/336
Supplier Device Package	TO-78-6
Transistor Type	2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

JANTXV2N3810U-Dual-Transistor Series

PNP Silicon Dual Switching -60V, -0.05A

Part	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Qualification	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Mounting Type	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Grade
Microchip Technology JANTXV2N3810U/TR	50 mA	TO-78-6	MIL-PRF-19500/336	10 µA	150	60 V	TO-78-6 Metal Can	Through Hole	350 mW	250 mV	2 PNP (Dual)	Military
Microchip Technology JANS2N3810L	50 mA	TO-78-6	MIL-PRF-19500/336	10 µA	150	60 V	TO-78-6 Metal Can	Through Hole	350 mW	250 mV	2 PNP (Dual)	Military
Microchip Technology 2N3810U/TR	50 mA	TO-78-6		10 µA	150	60 V	TO-78-6 Metal Can	Through Hole	350 mW	250 mV	2 PNP (Dual)
Microchip Technology JANSM2N3810L	50 mA	TO-78-6	MIL-PRF-19500/336	10 µA	150	60 V	TO-78-6 Metal Can	Through Hole	350 mW	250 mV	2 PNP (Dual)	Military
Microchip Technology JANTXV2N3810U	50 mA	TO-78-6	MIL-PRF-19500/336	10 µA	150	60 V	TO-78-6 Metal Can	Through Hole	350 mW	250 mV	2 PNP (Dual)	Military
Microchip Technology MSR2N3810U/TR	50 mA	U		10 µA	150	60 V	6-SMD No Lead	Surface Mount	350 mW	250 mV	2 PNP (Dual)
Microchip Technology JAN2N3810U	50 mA	TO-78-6	MIL-PRF-19500/336	10 µA	150	60 V	TO-78-6 Metal Can	Through Hole	350 mW	250 mV	2 PNP (Dual)	Military
Microchip Technology MNS2N3810U/TR	50 mA	TO-78-6	MIL-PRF-19500/336	10 µA	150	60 V	TO-78-6 Metal Can	Through Hole	350 mW	250 mV	2 PNP (Dual)	Military
Microchip Technology JANTXV2N3810	50 mA	TO-78-6	MIL-PRF-19500/336	10 µA	150	60 V	TO-78-6 Metal Can	Through Hole	350 mW	250 mV	2 PNP (Dual)	Military
Microchip Technology JANSR2N3810U	50 mA	6-SMD	MIL-PRF-19500/336	10 µA	150	60 V	6-SMD No Lead	Surface Mount	350 mW	250 mV	2 PNP (Dual)	Military

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	50	$ 88.54

Description

General part information

JANTXV2N3810U-Dual-Transistor Series

This specification covers the performance requirements for two electrically isolated, matched PNP, radiation hardened, silicon 2N3810, and 2N3811 Unitized, transistors as one dual unit for use in particular switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS), are provided for each encapsulated device type as specified in MIL-PRF-19500/336 and two levels of product assurance are provided for each unencapsulated die (JANHC and JANKC).

Documents

Technical documentation and resources

No documents available