JANTXV2N3810U-Dual-Transistor Series

PNP Silicon Dual Switching -60V, -0.05A

Catalog

PNP Silicon Dual Switching -60V, -0.05A

Part	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Qualification	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Mounting Type	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Grade
Microchip Technology JANTXV2N3810U/TR	50 mA	TO-78-6	MIL-PRF-19500/336	10 µA	150	60 V	TO-78-6 Metal Can	Through Hole	350 mW	250 mV	2 PNP (Dual)	Military
Microchip Technology JANS2N3810L	50 mA	TO-78-6	MIL-PRF-19500/336	10 µA	150	60 V	TO-78-6 Metal Can	Through Hole	350 mW	250 mV	2 PNP (Dual)	Military
Microchip Technology 2N3810U/TR	50 mA	TO-78-6		10 µA	150	60 V	TO-78-6 Metal Can	Through Hole	350 mW	250 mV	2 PNP (Dual)
Microchip Technology JANSM2N3810L	50 mA	TO-78-6	MIL-PRF-19500/336	10 µA	150	60 V	TO-78-6 Metal Can	Through Hole	350 mW	250 mV	2 PNP (Dual)	Military
Microchip Technology JANTXV2N3810U	50 mA	TO-78-6	MIL-PRF-19500/336	10 µA	150	60 V	TO-78-6 Metal Can	Through Hole	350 mW	250 mV	2 PNP (Dual)	Military
Microchip Technology MSR2N3810U/TR	50 mA	U		10 µA	150	60 V	6-SMD No Lead	Surface Mount	350 mW	250 mV	2 PNP (Dual)
Microchip Technology JAN2N3810U	50 mA	TO-78-6	MIL-PRF-19500/336	10 µA	150	60 V	TO-78-6 Metal Can	Through Hole	350 mW	250 mV	2 PNP (Dual)	Military
Microchip Technology MNS2N3810U/TR	50 mA	TO-78-6	MIL-PRF-19500/336	10 µA	150	60 V	TO-78-6 Metal Can	Through Hole	350 mW	250 mV	2 PNP (Dual)	Military
Microchip Technology JANTXV2N3810	50 mA	TO-78-6	MIL-PRF-19500/336	10 µA	150	60 V	TO-78-6 Metal Can	Through Hole	350 mW	250 mV	2 PNP (Dual)	Military
Microchip Technology JANSR2N3810U	50 mA	6-SMD	MIL-PRF-19500/336	10 µA	150	60 V	6-SMD No Lead	Surface Mount	350 mW	250 mV	2 PNP (Dual)	Military

Catalog

PNP Silicon Dual Switching -60V, -0.05A

Key Features

- The device package outlines are as follows: TO-78 and U for all encapsulated device types.

- The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/336.

Description

This specification covers the performance requirements for two electrically isolated, matched PNP, radiation hardened, silicon 2N3810, and 2N3811 Unitized, transistors as one dual unit for use in particular switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS), are provided for each encapsulated device type as specified in MIL-PRF-19500/336 and two levels of product assurance are provided for each unencapsulated die (JANHC and JANKC).