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Technical Specifications
Parameters and characteristics for this part
| Specification | RFN6T2DNZC9 |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 6 A |
| Current - Reverse Leakage @ Vr | 10 ÁA |
| Diode Configuration | 1 Pair Common Cathode |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 150 ¯C |
| Package / Case | TO-220-3 Full Pack |
| Reverse Recovery Time (trr) | 25 ns |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | TO-220FN |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 200 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 980 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1000 | $ 1.55 | |
| Tube | 1 | $ 0.64 | ||
| 50 | $ 0.53 | |||
| 100 | $ 0.39 | |||
| 500 | $ 0.32 | |||
| 1000 | $ 0.30 | |||
Description
General part information
RFN6 Series
RFN6BGE2D is the silicon epitaxial planar type Fast Recovery Diode.
Documents
Technical documentation and resources
