Catalog
Super Fast Recovery Diode
Description
AI
RFN6BGE2D is the silicon epitaxial planar type Fast Recovery Diode.
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Super Fast Recovery Diode
Super Fast Recovery Diode
| Part | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) (per Diode) | Diode Configuration | Mounting Type | Reverse Recovery Time (trr) | Speed | Operating Temperature - Junction | Technology | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If [Max] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 10 ÁA | 200 V | 6 A | 1 Pair Common Cathode | Through Hole | 25 ns | 200 mA 500 ns | 150 ¯C | Standard | TO-220FN | 980 mV | TO-220-3 Full Pack |
 Rohm Semiconductor | 10 ÁA | 200 V | 3 A | 1 Pair Common Cathode | Surface Mount | 25 ns | 200 mA 500 ns | 150 ¯C | Standard | TO-252GE | 980 mV | DPAK (2 Leads + Tab) SC-63 TO-252-3 |