Integrated Circuits (ICs)

IRS21271STRPBF

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INFINEON

THE IRS21271S IS A 600 V SINGLE HIGH-SIDE GATE DRIVER IC WITH OVER CURRENT PROTECTION AND FAULT REPORTING

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Integrated Circuits (ICs)

IRS21271STRPBF

Active

INFINEON

THE IRS21271S IS A 600 V SINGLE HIGH-SIDE GATE DRIVER IC WITH OVER CURRENT PROTECTION AND FAULT REPORTING

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Technical Specifications

Parameters and characteristics for this part

Specification	IRS21271STRPBF

Channel Type	Single
Current - Peak Output (Source, Sink) [custom]	600 mA
Current - Peak Output (Source, Sink) [custom]	290 mA
Driven Configuration	High-Side
Gate Type	N-Channel MOSFET, IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.5 V, 0.8 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Rise / Fall Time (Typ) [custom]	40 ns
Rise / Fall Time (Typ) [custom]	80 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	9 V

IRS21271 Series

Part	Gate Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Operating Temperature [Min]	Operating Temperature [Max]	Logic Voltage - VIL, VIH	Number of Drivers	Channel Type	Driven Configuration	Package / Case	Package / Case	Package / Case	Mounting Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	High Side Voltage - Max (Bootstrap) [Max]	Supplier Device Package	Input Type	Voltage - Supply [Max]	Voltage - Supply [Min]
INFINEON IRS21271STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	40 ns	80 ns	-40 °C	150 °C	0.8 V 2.5 V	1	Single	High-Side	0.154 in	8-SOIC	3.9 mm	Surface Mount	600 mA	290 mA	600 V	8-SOIC	Non-Inverting	20 V	9 V
INFINEON IRS21271SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	40 ns	80 ns	-40 °C	150 °C	0.8 V 2.5 V	1	Single	High-Side	0.154 in	8-SOIC	3.9 mm	Surface Mount	600 mA	290 mA	600 V	8-SOIC	Non-Inverting	20 V	9 V
INFINEON IRS21271PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	40 ns	80 ns	-40 °C	150 °C	0.8 V 2.5 V	1	Single	High-Side		8-DIP (0.300" 7.62mm)		Through Hole	600 mA	290 mA	600 V	8-PDIP	Non-Inverting	20 V	9 V
INFINEON IRS21271PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	40 ns	80 ns	-40 °C	150 °C	0.8 V 2.5 V	1	Single	High-Side		8-DIP (0.300" 7.62mm)		Through Hole	600 mA	290 mA	600 V	8-PDIP	Non-Inverting	20 V	9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.99
		10	$ 1.27
		25	$ 1.08
		100	$ 0.87
		250	$ 0.76
		500	$ 0.70
		1000	$ 0.64
	Digi-Reel®	1	$ 1.99
		10	$ 1.27
		25	$ 1.08
		100	$ 0.87
		250	$ 0.76
		500	$ 0.70
		1000	$ 0.64
	N/A	1692	$ 0.90
	Tape & Reel (TR)	2500	$ 0.59
		5000	$ 0.55
		7500	$ 0.53
		12500	$ 0.52
		17500	$ 0.50

Description

General part information

IRS21271 Series

IRS21271STRPBF is a high voltage, high-speed power MOSFET and IGBT current sensing single channel driver. Proprietary HVIC and latch-immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs, down to 3.3V. The protection circuity detects over-current in the driven power transistor and terminates the gate drive voltage. An open drain FAULT signal is provided to indicate that an over-current shutdown has occurred. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side or low-side configuration which operates up to 600V.

Documents

Technical documentation and resources