Integrated Circuits (ICs)

IRS21271PBF

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IC GATE DRVR HIGH-SIDE 8DIP

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Integrated Circuits (ICs)

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IC GATE DRVR HIGH-SIDE 8DIP

Technical Specifications

Parameters and characteristics for this part

Specification	IRS21271PBF

Channel Type	Single
Current - Peak Output (Source, Sink) [custom]	600 mA
Current - Peak Output (Source, Sink) [custom]	290 mA
Driven Configuration	High-Side
Gate Type	N-Channel MOSFET, IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.5 V, 0.8 V
Mounting Type	Through Hole
Number of Drivers	1
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-DIP (0.300", 7.62mm)
Rise / Fall Time (Typ) [custom]	40 ns
Rise / Fall Time (Typ) [custom]	80 ns
Supplier Device Package	8-PDIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	9 V

Part	Gate Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Operating Temperature [Min]	Operating Temperature [Max]	Logic Voltage - VIL, VIH	Number of Drivers	Channel Type	Driven Configuration	Package / Case	Package / Case	Package / Case	Mounting Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	High Side Voltage - Max (Bootstrap) [Max]	Supplier Device Package	Input Type	Voltage - Supply [Max]	Voltage - Supply [Min]
INFINEON IRS21271STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	40 ns	80 ns	-40 °C	150 °C	0.8 V 2.5 V	1	Single	High-Side	0.154 in	8-SOIC	3.9 mm	Surface Mount	600 mA	290 mA	600 V	8-SOIC	Non-Inverting	20 V	9 V
INFINEON IRS21271SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	40 ns	80 ns	-40 °C	150 °C	0.8 V 2.5 V	1	Single	High-Side	0.154 in	8-SOIC	3.9 mm	Surface Mount	600 mA	290 mA	600 V	8-SOIC	Non-Inverting	20 V	9 V
INFINEON IRS21271PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	40 ns	80 ns	-40 °C	150 °C	0.8 V 2.5 V	1	Single	High-Side		8-DIP (0.300" 7.62mm)		Through Hole	600 mA	290 mA	600 V	8-PDIP	Non-Inverting	20 V	9 V
INFINEON IRS21271PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	40 ns	80 ns	-40 °C	150 °C	0.8 V 2.5 V	1	Single	High-Side		8-DIP (0.300" 7.62mm)		Through Hole	600 mA	290 mA	600 V	8-PDIP	Non-Inverting	20 V	9 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Side Gate Driver IC Non-Inverting 8-PDIP

Technical documentation and resources