IRS21271 Series
Manufacturer: INFINEON
THE IRS21271S IS A 600 V SINGLE HIGH-SIDE GATE DRIVER IC WITH OVER CURRENT PROTECTION AND FAULT REPORTING
| Part | Gate Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Operating Temperature [Min] | Operating Temperature [Max] | Logic Voltage - VIL, VIH | Number of Drivers | Channel Type | Driven Configuration | Package / Case | Package / Case | Package / Case | Mounting Type | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | High Side Voltage - Max (Bootstrap) [Max] | Supplier Device Package | Input Type | Voltage - Supply [Max] | Voltage - Supply [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 40 ns | 80 ns | -40 °C | 150 °C | 0.8 V 2.5 V | 1 | Single | High-Side | 0.154 in | 8-SOIC | 3.9 mm | Surface Mount | 600 mA | 290 mA | 600 V | 8-SOIC | Non-Inverting | 20 V | 9 V |
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 40 ns | 80 ns | -40 °C | 150 °C | 0.8 V 2.5 V | 1 | Single | High-Side | 0.154 in | 8-SOIC | 3.9 mm | Surface Mount | 600 mA | 290 mA | 600 V | 8-SOIC | Non-Inverting | 20 V | 9 V |
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 40 ns | 80 ns | -40 °C | 150 °C | 0.8 V 2.5 V | 1 | Single | High-Side | 8-DIP (0.300" 7.62mm) | Through Hole | 600 mA | 290 mA | 600 V | 8-PDIP | Non-Inverting | 20 V | 9 V | ||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 40 ns | 80 ns | -40 °C | 150 °C | 0.8 V 2.5 V | 1 | Single | High-Side | 8-DIP (0.300" 7.62mm) | Through Hole | 600 mA | 290 mA | 600 V | 8-PDIP | Non-Inverting | 20 V | 9 V |